Open AccessGaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength
Author(s) -
Chengyin Wang,
Liangyi Chen,
Cheng-Pin Chen,
Ying Cheng,
Min-Yung Ke,
Min-Yann Hsieh,
Hanming Wu,
LungHan Peng,
JianJang Huang
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.010549
Subject(s) - nanorod , materials science , electroluminescence , optoelectronics , light emitting diode , wavelength , quantum confined stark effect , optics , diode , quantum efficiency , layer (electronics) , nanotechnology , quantum well , laser , physics
A practical process to fabricate InGaN/GaN multiple quantum well light emitting diodes (LEDs) with a self-organized nanorod structure is demonstrated. The nanorod array is realized by using nature lithography of surface patterned silica spheres followed by dry etching. A layer of spin-on-glass (SOG), which intervening the rod spacing, serves the purpose of electric isolation to each of the parallel nanorod LED units. The electroluminescence peak wavelengths of the nanorod LEDs nearly remain as constant for an injection current level between 25mA and 100mA, which indicates that the quantum confined stark effect is suppressed in the nanorod devices. Furthermore, from the Raman light scattering analysis we identify a strain relaxation mechanism for lattice mismatch layers in the nanostructure.