Open AccessElectromagnetic modeling of active silicon nanocrystal waveguides
Author(s) -
Brandon Redding,
Shouyuan Shi,
Tim Creazzo,
Dennis W. Prather
Publication year - 2008
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.008792
Subject(s) - finite difference time domain method , lasing threshold , optics , silicon , materials science , polarization (electrochemistry) , optoelectronics , amplifier , electromagnetic radiation , waveguide , nonlinear system , spontaneous emission , physics , laser , chemistry , cmos , quantum mechanics
In this paper we propose an electromagnetic analysis of active silicon nano-crystal (Si-nc) waveguide devices. To account for the nonlinearity in the active medium we introduce a four level rate equation model whose parameters are based on experimentally reported material properties. The electromagnetic polarization serves to couple the quantum mechanical and electromagnetic behavior within the ADE-FDTD scheme. The developed modeling tool is used to simulate waveguide amplifiers, enhanced spontaneous emission microcavities, and the temporal lasing dynamics of active Si-nc based devices.