Open Access25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator
Author(s) -
Michael Waldow,
Tobias Plötzing,
Martin Gottheil,
Michael Först,
Jens Bolten,
T. Wahlbrink,
H. Kurz
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.007693
Subject(s) - materials science , extinction ratio , resonator , silicon , silicon on insulator , ion implantation , optoelectronics , femtosecond , optics , optical switch , switching time , silicon photonics , oxygen , ion , wavelength , laser , chemistry , physics , organic chemistry
We present all-optical switching in oxygen ion implanted silicon microring resonators. Time-dependent signal modulation is achieved by shifting resonance wavelengths of microrings through the plasma dispersion effect via femtosecond photogeneration of electron-hole pairs and subsequent trapping at implantation induced defect states. We observe a switching time of 25 ps at extinction ratio of 9 dB and free carrier lifetime of 15 ps for an implantation dose of 7 x 10(12) cm(-2). The influence of implantation dose on the switching speed and additional propagation losses of the silicon waveguide--the latter as a result of implantation induced amorphization--is carefully evaluated and in good agreement with theoretical predictions.