Open Access290-fs pulses from a semiconductor disk laser
Author(s) -
Peter Klopp,
Florian Saas,
M. Zorn,
M. Weyers,
Uwe Griebner
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.005770
Subject(s) - optics , disk laser , semiconductor , semiconductor laser theory , materials science , laser , diode , optoelectronics , dispersion (optics) , semiconductor optical gain , physics
Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The all-semiconductor laser employs a graded-gap-barrier design in the gain section. A fast saturable absorber mirror serves as a passive mode-locker. No further elements for internal or external dispersion control are required.
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