
Resonant phase jump with enhanced electric field caused by surface phonon polariton in terahertz region
Author(s) -
T. Okada,
Masaya Nagai,
Kōichiro Tanaka
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.005633
Subject(s) - terahertz radiation , electric field , optics , prism , polariton , surface phonon , reflection (computer programming) , phonon , phase (matter) , physics , amplitude , total internal reflection , terahertz spectroscopy and technology , materials science , terahertz gap , electromagnetic radiation , optoelectronics , condensed matter physics , far infrared laser , quantum mechanics , computer science , programming language , laser , terahertz metamaterials
We investigated surface phonon polariton in cesium iodide with terahertz time-domain attenuated total reflection method in Otto configuration, which gives us both information on amplitude and phase of surface electromagnetic mode directly. Systematic experiments with precise control of the distance between a prism and an active material show that the abrupt change of pi-phase jump appears sensitively under polariton picture satisfied when the local electric field at the interface becomes a maximum. This demonstration will open the novel phase-detection terahertz sensor using the active medium causing the strong enhancement of terahertz electric field.