Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators | Zendy

Gui-Rong Zhou | Zendy; M. W. Geis | Zendy; S. J. Spector | Zendy; Fuwan Gan | Zendy; Matthew E. Grein | Zendy; R. T. Schulein | Zendy; Jason S. Orcutt | Zendy; Jung Yoon | Zendy; D. M. Len | Zendy; T. M. Lyszczarz | Zendy; Erich P. Ippen | Zendy; Franz X. Käertner | Zendy

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Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators

Author(s) -

Gui-Rong Zhou,

M. W. Geis,

S. J. Spector,

Fuwan Gan,

Matthew E. Grein,

R. T. Schulein,

Jason S. Orcutt,

Jung Yoon,

D. M. Len,

T. M. Lyszczarz,

Erich P. Ippen,

Franz X. Käertner

Publication year - 2008

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.16.005218

Subject(s) - figure of merit , mach–zehnder interferometer , optics , silicon , materials science , carrier lifetime , doping , electro optic modulator , optoelectronics , interferometry , physics , optical modulator , phase modulation , phase noise

We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC and AC characteristics. A figure of merit, static VpiL, as low as 0.24Vmm is achieved. The effect of carrier lifetime variation with doping concentration is explored and found to be important for the modulator characteristics.

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