Open AccessEffect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators
Author(s) -
Guowei Zhou,
M. W. Geis,
Steven J. Spector,
Fuwan Gan,
Matthew E. Grein,
Robert Schulein,
Jason S. Orcutt,
Junghyo Yoon,
Donna Len,
T. M. Lyszczarz,
Erich P. Ippen,
Franz X. Käertner
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.005218
Subject(s) - figure of merit , mach–zehnder interferometer , optics , silicon , materials science , carrier lifetime , doping , electro optic modulator , optoelectronics , interferometry , physics , optical modulator , phase modulation , phase noise
We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC and AC characteristics. A figure of merit, static VpiL, as low as 0.24Vmm is achieved. The effect of carrier lifetime variation with doping concentration is explored and found to be important for the modulator characteristics.