Open AccessIntegration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon
Author(s) -
Jun Yang,
P. Bhattacharya
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.005136
Subject(s) - materials science , optoelectronics , silicon , chemical vapor deposition , amorphous silicon , epitaxy , laser , plasma enhanced chemical vapor deposition , amorphous solid , optics , nanotechnology , crystalline silicon , chemistry , physics , layer (electronics) , organic chemistry
The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a:Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of approximately 10 dB/cm at a wavelength of 1.05 microm. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 microm-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets.