Open AccessTwofold co-ordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO_2
Author(s) -
A. Alessi,
S. Agnello,
F. M. Gelardi,
S. Grandi,
A. Magistris,
R. Boscaino
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.004895
Subject(s) - photosensitivity , photoluminescence , irradiation , materials science , doping , electron paramagnetic resonance , absorption (acoustics) , amorphous solid , ionizing radiation , radiation , germanium , optics , optoelectronics , gamma ray , nuclear magnetic resonance , silicon , chemistry , crystallography , physics , astrophysics , nuclear physics , composite material
We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by gamma radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern writing through ionizing radiation.