Open AccessWavelength switchable semiconductor laser using half-wave V-coupled cavities
Author(s) -
JianJun He,
Dekun Liu
Publication year - 2008
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.003896
Subject(s) - optics , vernier scale , materials science , interferometry , waveguide , laser , wavelength , semiconductor laser theory , coupling (piping) , power dividers and directional couplers , modulation (music) , optoelectronics , physics , acoustics , metallurgy
A new semiconductor laser structure with digitally switchable wavelength is proposed. The device comprises two coupled cavities with different optical path lengths, which form V-shaped branches with a reflective 2x2 half-wave optical coupler at the closed end. The reflective 2x2 coupler is designed to have a pi-phase difference between cross-coupling and self-coupling so as to produce synchronous power transfer functions. High single-mode selectivity is achieved by optimizing the coupling coefficient. The switchable wavelength range is greatly increased by using Vernier effect. Using deep-etched trenches as partial reflectors, additional waveguide branch structures are used outside the laser cavities to form a complete Mach-Zehnder interferometer, allowing space switching, variable attenuation, or high speed modulation to be realized simultaneously. Detailed design principle and numerical results are presented.