Open AccessThe Co-film-thickness dependent lateral photoeffect in Co-SiO_2-Si metal-oxide-semiconductor structures
Author(s) -
Shilin Xiao,
H. Wang,
Zhiwei Zhao,
Yu Gu,
Yuxing Xia,
Z. H. Wang
Publication year - 2008
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.16.003798
Subject(s) - materials science , metal , semiconductor , thin film , irradiation , oxide , optics , laser , optoelectronics , nanotechnology , metallurgy , physics , nuclear physics
We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO(2) surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co(2.8mn)-SiO(2)-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.