Improvement of thermal properties of ultra-high Q silicon microdisk resonators

We present a detailed study of the thermal properties of ultra-high quality factor (Q) microdisk resonators on silicon-on-insulator (SOI) platforms. We show that by preserving the buried oxide layer underneath the Si resonator and by adding a thin Si pedestal layer at the interface between the resonator and the oxide layer we can increase the overall thermal conductivity of the structure while the ultra-high Q property is preserved. This allows higher field intensities inside the resonator which are crucial for nonlinear optics applications.