
Improvement of thermal properties of ultra-high Q silicon microdisk resonators
Author(s) -
Mohammad Soltani,
Qing Li,
Siva Yegnanarayanan,
Ali Adibi
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.017305
Subject(s) - resonator , silicon on insulator , materials science , silicon , optics , optoelectronics , q factor , layer (electronics) , thermal conductivity , thermal , pedestal , nonlinear optics , laser , nanotechnology , physics , composite material , meteorology , archaeology , history
We present a detailed study of the thermal properties of ultra-high quality factor (Q) microdisk resonators on silicon-on-insulator (SOI) platforms. We show that by preserving the buried oxide layer underneath the Si resonator and by adding a thin Si pedestal layer at the interface between the resonator and the oxide layer we can increase the overall thermal conductivity of the structure while the ultra-high Q property is preserved. This allows higher field intensities inside the resonator which are crucial for nonlinear optics applications.