Open AccessHigh-efficiency and high-contrast phosphorescent top-emitting organic light-emitting devices with p-type Si anodes
Author(s) -
Shuming Chen,
Yongbo Yuan,
Jiarong Lian,
Xiang Zhou
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.014644
Subject(s) - oled , materials science , phosphorescence , optoelectronics , quantum efficiency , anode , wafer , phosphorescent organic light emitting diode , iridium , transmittance , optics , cathode , doping , electrode , layer (electronics) , fluorescence , nanotechnology , chemistry , biochemistry , physics , catalysis
We report high-efficiency and high-contrast phosphorescent topemitting organic light-emitting devices (OLEDs) by employing the low reflectance p-type Si bottom anodes and the high transmittance Cs(2)CO(3)/Ag top cathodes for effective hole and electron injection. With the green electrophosphorescent material fac tris (2-phenylpyridine) iridium [Ir(ppy)(3)] doped emitting layer, the devices exhibit peak external quantum and power efficiencies of 3.5% (12 cd/A) and 4.5 lm/W, which are the highest values reported for OLEDs using Si wafers as electrodes. Moreover, these devices exhibit significantly higher contrast compared to the conventional bottom-emitting and top-emitting OLEDs with the highly reflective back electrodes.