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Laser damage resistance of RbTiOPO_4: evidence of polarization dependent anisotropy
Author(s) -
Frank Wagner,
Anne Hildenbrand,
Jean-Yves Natoli,
Mireille Commandré,
F. Théodore,
Hervé Albrecht
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.013849
Subject(s) - pockels effect , optics , polarization (electrochemistry) , materials science , laser , anisotropy , nanosecond , wavelength , crystal (programming language) , optoelectronics , physics , chemistry , computer science , programming language
Nanosecond-laser induced damage of RbTiOPO(4) crystals (RTP) has been studied at 1064 nm as a function of propagation direction and polarization orientation. A significant difference in the Laser Induced Damage Threshold (LIDT) was observed for x-cut and y-cut crystals in Pockels cell configuration, where the light propagation direction is along the x and y axes of the crystal respectively. In Pockels cell configuration the polarization is oriented at 45? with respect to the z-axis of the crystal. Experiments with the polarization oriented parallel to the principal axes of the crystal pointed out the importance of the polarization direction for the LIDT whereas the propagation direction did not significantly influence the LIDT. Comparison of the experimental data with a simple model reveals the influence of frequency doubling on the LIDT in Pockels cell configuration. In the case of the y-cut Pockels cell, the generation of frequency doubled light causes an LIDT below the LIDT of x and z-polarized light at the fundamental wavelength.