Open AccessPreparation of high laser induced damage threshold antireflection film using interrupted ion assisted deposition
Author(s) -
Dawei Zhang,
Yuanshen Huang,
Zhengji Ni,
Songlin Zhuang,
Jianda Shao,
Fan Zhang
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.010753
Subject(s) - materials science , deposition (geology) , optics , ion beam assisted deposition , laser , evaporation , ion , absorption (acoustics) , optoelectronics , pulsed laser deposition , optical coating , electric field , thin film , ion beam , beam (structure) , nanotechnology , composite material , chemistry , paleontology , physics , organic chemistry , sediment , biology , thermodynamics , quantum mechanics
Single layers and antireflection films were deposited by electron beam evaporation, ion assisted deposition and interrupted ion assisted deposition, respectively. Antireflection film of quite high laser damage threshold (18J/cm2) deposited by interrupted ion assisted deposition were got. The electric field distribution, weak absorption, and residual stress of films and their relations to damage threshold were investigated. It was shown that the laser induced damage threshold of film was the result of competition of disadvantages and advantages, and interrupted ion assisted deposition was one of the valuable methods for preparing high laser induced damage threshold films.