Phase change characteristics of aluminum doped Ge_2Sb_2Te_5 films prepared by magnetron sputtering | Zendy

Shenjin Wei | Zendy; Jing Li | Zendy; Xia Wu | Zendy; Peng Zhou | Zendy; Songyou Wang | Zendy; Yu-Xiang Zheng | Zendy; LiangYao Chen | Zendy; Fuxi Gan | Zendy; Xia Zhang | Zendy; Guohua Li | Zendy

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Phase change characteristics of aluminum doped Ge_2Sb_2Te_5 films prepared by magnetron sputtering

Author(s) -

Shenjin Wei,

Jing Li,

Xia Wu,

Peng Zhou,

Songyou Wang,

Yu-Xiang Zheng,

LiangYao Chen,

Fuxi Gan,

Xia Zhang,

Guohua Li

Publication year - 2007

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.15.010584

Subject(s) - materials science , x ray photoelectron spectroscopy , sputter deposition , doping , analytical chemistry (journal) , sputtering , annealing (glass) , thin film , ellipsometry , aluminium , optics , alloy , optoelectronics , nuclear magnetic resonance , nanotechnology , metallurgy , chemistry , physics , chromatography

Aluminum-doped Ge(2)Sb(2)Te(5) (Al(x)GST) films were deposited on Si(100) substrates by co-magnetron sputtering system. The Aluminum concentrations in these films are determined by X-ray photoelectron spectroscopy (XPS). The influence of Al doping upon phase change characteristics of these Al(x)GST alloy films has been investigated by X-ray diffraction (XRD) and a temperature-regulable UVISEL(TM) typed spectroscopic ellipsometry (TRSE). With the augment of Al doping concentration, the crystalline temperatures of Al(x)GST films went up while annealing, and the face-centered-cubic (fcc) phase had high thermal stability. The reflectivity contrast of the films increases obviously, which is effective to improve the signal to noise ratio (SNR) for optical phase-change storage.

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