Open AccessPhase change characteristics of aluminum doped Ge_2Sb_2Te_5 films prepared by magnetron sputtering
Author(s) -
Shenjin Wei,
Jing Li,
Xia Wu,
Peng Zhou,
Song-You Wang,
Yuanzhou Zheng,
LiangYao Chen,
Fuxi Gan,
Xia Zhang,
Guohua Li
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.010584
Subject(s) - materials science , x ray photoelectron spectroscopy , sputter deposition , doping , analytical chemistry (journal) , sputtering , annealing (glass) , thin film , ellipsometry , aluminium , optics , alloy , optoelectronics , nuclear magnetic resonance , nanotechnology , metallurgy , chemistry , physics , chromatography
Aluminum-doped Ge(2)Sb(2)Te(5) (Al(x)GST) films were deposited on Si(100) substrates by co-magnetron sputtering system. The Aluminum concentrations in these films are determined by X-ray photoelectron spectroscopy (XPS). The influence of Al doping upon phase change characteristics of these Al(x)GST alloy films has been investigated by X-ray diffraction (XRD) and a temperature-regulable UVISEL(TM) typed spectroscopic ellipsometry (TRSE). With the augment of Al doping concentration, the crystalline temperatures of Al(x)GST films went up while annealing, and the face-centered-cubic (fcc) phase had high thermal stability. The reflectivity contrast of the films increases obviously, which is effective to improve the signal to noise ratio (SNR) for optical phase-change storage.