Open AccessHigh speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide
Author(s) -
Laurent Vivien,
Mathieu Rouvière,
Jean-Marc Fédéli,
Delphine MarrisMorini,
J.-F. Damlencourt,
J. Mangeney,
P. Crozat,
L. El Melhaoui,
Éric Cassan,
Xavier Le Roux,
D. Pascal,
S. Laval
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.009843
Subject(s) - photodetector , responsivity , materials science , optoelectronics , germanium , femtosecond , optics , silicon on insulator , semiconductor , silicon , cmos , laser , physics
We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.