Ultrashort pulse characterization by ultra-thin ZnO, GaN, and AlN crystals | Zendy

Yohei Kobayashi | Zendy; Dai Yoshitomi | Zendy; Kakuya Iwata | Zendy; Hideyuki Takada | Zendy; Kenji Torizuka | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Ultrashort pulse characterization by ultra-thin ZnO, GaN, and AlN crystals

Author(s) -

Yohei Kobayashi,

Dai Yoshitomi,

Kakuya Iwata,

Hideyuki Takada,

Kenji Torizuka

Publication year - 2007

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.15.009748

Subject(s) - materials science , optics , ultrashort pulse , thin film , characterization (materials science) , optoelectronics , semiconductor , micrometer , pulse (music) , nonlinear optics , second harmonic generation , laser , nanotechnology , physics , detector

Ultra-thin semiconductor crystals were investigated as nonlinear materials for second-harmonic generation. Nonlinear susceptibilities of sub-micrometer- thick ZnO, GaN, and AlN crystals were measured, and these crystals were used for sub-10-fs pulse measurement by a fringe-resolved autocorrelation method. We found that a one-cycle pulse could be characterized by using these ultra-thin-film crystals.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research