Open AccessEmission characteristics of ion-irradiated In_0.53Ga_0.47As based photoconductive antennas excited at 1.55 µm
Author(s) -
J. Mangeney,
N. Chimot,
L. Meignien,
N. Zerounian,
P. Crozat,
K. Blary,
JeanFrançois Lampin,
Patrick Mounaix
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.008943
Subject(s) - terahertz radiation , photoconductivity , materials science , optoelectronics , wavelength , femtosecond , excited state , optics , irradiation , radiation , common emitter , ion , laser , physics , atomic physics , quantum mechanics , nuclear physics
We present a detailed study of the effect of the carrier lifetime on the terahertz signal characteristics emitted by Br(+)-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and the average radiated powers for various carrier lifetimes are experimentally analyzed and compared to predictions of analytical models of charge transport. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The power radiated by ion-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited by 1550 nm wavelength optical pulses is measured to be 0.8 muW. This value is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses.