Open AccessLarge–area, three–state, binary amplitude and binary phase vertical–cavity multiple quantum well electroabsorption modulator
Author(s) -
Stéphane Junique,
Qin Wang,
Susanne Almqvist,
Bertrand Noharet,
Jan Y. Andersson
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.008566
Subject(s) - optics , electro optic modulator , phase modulation , amplitude , spatial light modulator , binary number , optical modulator , modulation (music) , amplitude modulation , materials science , phase (matter) , physics , optoelectronics , frequency modulation , telecommunications , bandwidth (computing) , phase noise , arithmetic , mathematics , quantum mechanics , computer science , acoustics
We present the design and characterization of a large optical modulator array based on GaAs multiple quantum wells for amplitude and phase modulation. The device shows two high-reflectance states with a phase difference close to 180 degrees for use as a binary phase modulator. It also shows a third, low-reflectance state for use as an amplitude modulator. It is segmented into 64 pixels in a single row, giving an active area of 2mm x 5mm. We discuss the device performance as a ternary binary amplitude and binary phase modulator, including contrast ratio and uniformity, and show that a voltage swing of only 5V is needed to drive it.