Open AccessOrganic semiconductor distributed feedback laser fabricated by direct laser interference ablation
Author(s) -
M. Stroisch,
Thomas Woggon,
Uli Lemmer,
G. Bastian,
Georg Violakis,
Stavros Pissadakis
Publication year - 2007
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.003968
Subject(s) - materials science , optics , laser , lasing threshold , optoelectronics , distributed feedback laser , dye laser , picosecond , semiconductor laser theory , grating , laser ablation , interference lithography , ablation , holography , vertical cavity surface emitting laser , semiconductor , wavelength , medicine , physics , alternative medicine , pathology , fabrication , engineering , aerospace engineering
We use a pulsed, frequency tripled picosecond Nd:YAG laser for holographic ablation to pattern a surface relief grating into an organic semiconductor guest-host system. The resulting second order distributed feedback lasers exhibit laser action with laser thresholds being comparable to those obtained with resonators structured by standard lithographic techniques. The details of the interference ablation of tris-(8-hydroxyquinoline) aluminum (Alq(3)) doped with the laser dye 4- dicyanomethylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) are presented and discussed. Lasing action is demonstrated at a wavelength of 646.6 nm, exploiting second order Bragg reflection in a relief grating with a period of 399 nm.