Open AccessPhotoluminescence enhancement in Yb^3+:Er^3+co-doped eutectic Al_2O_3: SiO_2 thin films by 980nm excitation
Author(s) -
Qiong Song,
Jingsong Gao,
Xiaoyi Wang,
Chen Hong,
Tongtong Wang,
Xiaofeng Zheng,
Chengren Li,
Song Chen
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.003948
Subject(s) - materials science , photoluminescence , thin film , doping , raman spectroscopy , crystallization , substrate (aquarium) , sputtering , silicon , electron cyclotron resonance , optoelectronics , fourier transform infrared spectroscopy , analytical chemistry (journal) , optics , ion , nanotechnology , chemical engineering , chemistry , oceanography , physics , engineering , organic chemistry , chromatography , geology
Si nanocrystals (nc-Si) are addressed in the eutectic Al(2)O(3):SiO(2) thin films co-doped with Er(3+) and Yb(3+) by the laser-induced crystallization (LIC). The thin films are originally synthesized on a silica-on-silicon (SOS) substrate by the microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF sputtering. Raman spectroscopy has revealed that the strong crystallization occurs with the emergence of the nc-Si in the eutectic Al(2)O(3): SiO(2) layer during the liquid phase transformation. The dual wavelength energy transfer mechanism at 800nm and 980nm induced by 980nm excitation in nc-Si and Yb sensitized Er doped system has been proposed and demonstrated. A tenfold photoluminescence enhancement has been obtained from this mechanism.