Laser operation at 1.3µm of 2at.% doped crystalline Nd:YAG in a bounce geometry | Zendy

Daniel N. Sauder | Zendy; A. Minassian | Zendy; M. J. Damzen | Zendy

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Laser operation at 1.3µm of 2at.% doped crystalline Nd:YAG in a bounce geometry

Author(s) -

Daniel N. Sauder,

A. Minassian,

M. J. Damzen

Publication year - 2007

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.15.003230

Subject(s) - optics , materials science , laser , doping , amplifier , diode , q switching , laser diode , power (physics) , slope efficiency , repetition (rhetorical device) , optoelectronics , fiber laser , physics , cmos , quantum mechanics , linguistics , philosophy

High efficiency and high power laser operation of highly-doped 2at.% crystalline Nd:YAG at 1.3microm is demonstrated in a diode-side pumped bounce amplifier configuration. A linearly polarized output power of 16.7W is obtained representing the highest power at 1.3microm achieved to date, to our knowledge, in a highly doped crystalline Nd:YAG laser. The system could deliver over 9W average output power in Q-switched operation with repetition rates from 20 - 160kHz. With quasi-continuous wave diode pumping 5.5mJ pulses at 100Hz repetition rate were achieved as well as 50ns pulses in Q-switched operation.

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