Open AccessDesign of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform
Author(s) -
Jifeng Liu,
Dong Pan,
Samerkhae Jongthammanurak,
Kazumi Wada,
Lionel C. Kimerling,
Jürgen Michel
Publication year - 2007
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.15.000623
Subject(s) - responsivity , silicon on insulator , photodetector , materials science , optoelectronics , extinction ratio , cladding (metalworking) , photonic integrated circuit , bandwidth (computing) , optics , photonics , waveguide , silicon , physics , telecommunications , wavelength , computer science , metallurgy
We present a design of monolithically integrated GeSi electroabsorption modulators and photodetectors for electronic-photonic integrated circuits on a silicon-on-insulator (SOI) platform. The GeSi electroabsorption modulator is based on the Franz-Keldysh effect, and the GeSi composition is chosen for optimal performance around 1550 nm. The designed modulator device is butt-coupled to Si(core)/SiO(2)(cladding) high index contrast waveguides, and has a predicted 3 dB bandwidth of >50 GHz and an extinction ratio of 10 dB. The same device structure can also be used for a waveguide-coupled photodetector with a predicted responsivity of > 1 A/W and a 3 dB bandwidth of > 35 GHz. Use of the same GeSi composition and device structure allows efficient monolithic process integration of the modulators and the photodetectors on an SOI platform.