Open AccessReliability in the oxide vertical-cavity surface-emitting lasers exposed to electrostatic discharge
Author(s) -
Hee-Dae Kim,
Won Joon Jeong,
Hyun-Ee Shin,
JungHoon Ser,
Hyunchol Shin,
YoungGu Ju
Publication year - 2006
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.14.012432
Subject(s) - electrostatic discharge , materials science , optoelectronics , oxide , optics , voltage , reliability (semiconductor) , aperture (computer memory) , leakage (economics) , gate oxide , breakdown voltage , threshold voltage , power (physics) , electrical engineering , transistor , physics , quantum mechanics , acoustics , economics , metallurgy , macroeconomics , engineering
Electrostatic discharge(ESD) damage is known as a major source affecting the lifetime of oxide VCSEL. We investigated how ESD damage threshold voltage depends on the size, thickness, and composition of the oxide aperture by measuring the change of output power and reverse leakage current after ESD. ESD damage threshold voltage increased with the size of the oxide aperture, regardless of the thickness and the composition of the oxide aperture. However, damaged devices with thinner oxide layers showed relatively longer lifetime in the reliability test. The reliability data also showed that the VCSELs exposed to ESD have steeper power declines in reliability test than normal devices. This may be due to the defects formed in the active medium by ESD.