Open AccessPhotoluminescence from n-type porous silicon layer enhanced by a forward-biased np-junction
Author(s) -
Jia-Chuan Lin,
Wei-Lun Chen,
Wen-Hsuan Tsai
Publication year - 2006
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.14.009764
Subject(s) - porous silicon , etching (microfabrication) , photoluminescence , materials science , layer (electronics) , silicon , optoelectronics , fabrication , p–n junction , porosity , optics , nanotechnology , composite material , physics , medicine , alternative medicine , pathology
A new approach for the fabrication of n-type porous silicon layer is proposed. A hole-rich p-layer is arranged underneath the n-layer, and the np-junction is under forward biased condition in the etching process. Therefore sufficient holes can drift straight-upward and pass across the np-junction from p-region to n-region to participate in electrochemical reaction during the etching process with an unfailing supply. Illumination is an optional hole-supplier in this approach, so the problem of illumination-depth limitation can be overcome. Strong visible photoluminescence emissions are demonstrated on the hole-poor n-type porous layer at about 650 nm.