GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate | Zendy

Takeo Maruyama | Zendy; Tadashi Okumura | Zendy; Shinichi Sakamoto | Zendy; Koji Miura | Zendy; Yoshifumi Nishimoto | Zendy; Shigehisa Arai | Zendy

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GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

Author(s) -

Takeo Maruyama,

Tadashi Okumura,

Shinichi Sakamoto,

Koji Miura,

Yoshifumi Nishimoto,

Shigehisa Arai

Publication year - 2006

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.14.008184

Subject(s) - materials science , laser , optoelectronics , optics , substrate (aquarium) , silicon on insulator , semiconductor laser theory , distributed feedback laser , membrane , silicon , semiconductor , chemistry , wavelength , biochemistry , oceanography , physics , geology

A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 microm and a stripe width of 2 microm.

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