Open AccessGaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate
Author(s) -
Takeo Minamikawa,
Tadashi Okumura,
Shinichi Sakamoto,
K. Miura,
Yoshio Nishimoto,
Shigehisa Arai
Publication year - 2006
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.14.008184
Subject(s) - materials science , laser , optoelectronics , optics , substrate (aquarium) , silicon on insulator , semiconductor laser theory , distributed feedback laser , membrane , silicon , semiconductor , chemistry , wavelength , biochemistry , oceanography , physics , geology
A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 microm and a stripe width of 2 microm.