Monolithic integrated Raman silicon laser | Zendy

Haisheng Rong | Zendy; Ying-Hao Kuo | Zendy; Shengbo Xu | Zendy; Ansheng Liu | Zendy; Richard Jones | Zendy; Mario Paniccia | Zendy; Oded Cohen | Zendy; Omri Raday | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Monolithic integrated Raman silicon laser

Author(s) -

Haisheng Rong,

Ying-Hao Kuo,

Shengbo Xu,

Ansheng Liu,

Richard Jones,

Mario Paniccia,

Oded Cohen,

Omri Raday

Publication year - 2006

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.14.006705

Subject(s) - materials science , laser , laser linewidth , optoelectronics , silicon on insulator , optics , raman amplification , silicon , lasing threshold , hybrid silicon laser , photonic integrated circuit , raman laser , resonator , raman spectroscopy , silicon photonics , semiconductor laser theory , laser diode , diode , photonics , raman scattering , optical amplifier , wavelength , physics

We present a monolithic integrated Raman silicon laser based on silicon-on-insulator (SOI) rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we achieved stable, single mode, continuous-wave (CW) lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a measured side mode suppression exceeding 70dB and laser linewidth of <100 kHz. This laser architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research