Open AccessMonolithic integrated Raman silicon laser
Author(s) -
Haisheng Rong,
Ying-Hao Kuo,
Shengbo Xu,
Ansheng Liu,
Richard E. Jones,
Mario Paniccia,
Oded Cohen,
Omri Raday
Publication year - 2006
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.14.006705
Subject(s) - materials science , laser , laser linewidth , optoelectronics , silicon on insulator , optics , raman amplification , silicon , lasing threshold , hybrid silicon laser , photonic integrated circuit , raman laser , resonator , raman spectroscopy , silicon photonics , semiconductor laser theory , laser diode , diode , photonics , raman scattering , optical amplifier , wavelength , physics
We present a monolithic integrated Raman silicon laser based on silicon-on-insulator (SOI) rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we achieved stable, single mode, continuous-wave (CW) lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a measured side mode suppression exceeding 70dB and laser linewidth of <100 kHz. This laser architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device.