Open Access1-W antimonide-based vertical external cavity surface emitting laser operating at 2-µm
Author(s) -
Antti Härkönen,
Mircea Guina,
Oleg G. Okhotnikov,
K. Rößner,
M. Hümmer,
T. Lehnhardt,
Michael Müller,
A. Forchel,
M. Fischer
Publication year - 2006
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.14.006479
Subject(s) - antimonide , materials science , optics , indium antimonide , laser , optoelectronics , distributed bragg reflector , vertical cavity surface emitting laser , laser linewidth , quantum well , semiconductor laser theory , diamond , bragg's law , diffraction , wavelength , semiconductor , physics , composite material
We report a high-power optically pumped semiconductor vertical external cavity surface emitting laser operating at 2-mum wavelength. The gain material consisted of 15 GaInSb quantum-wells placed within a three-lambda GaSb cavity and grown on the top of an 18-pairs AlAsSb/GaSb Bragg reflector. For thermal management we have used a transparent diamond heat spreader bonded on the top of the structure. When cooled down to 5 degrees C, the laser emitted up to 1 W of optical power in a nearly diffraction-limited Gaussian beam demonstrating the high potential of antimonide material for VECSEL fabrication.