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High repetition rate Q-switching performance in transversely diode-pumped Nd doped mixed gadolinium yttrium vanadate bounce laser
Author(s) -
Takashige Omatsu,
Masahito Okida,
A. Minassian,
M. J. Damzen
Publication year - 2006
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.14.002727
Subject(s) - materials science , gadolinium , yttrium , optics , diode , laser , vanadate , amplifier , q switching , pulse width modulation , doping , repetition (rhetorical device) , pulse repetition frequency , optoelectronics , power (physics) , physics , telecommunications , linguistics , philosophy , cmos , quantum mechanics , metallurgy , oxide , radar , computer science
Up to 650kHz high repetition active Q-switching was achieved with a pulse-width of <40ns by using a diode-side-pumped Nd:Gd(x)Y(1-x)VO(4) bounce amplifier. An average output power of 17.5W was obtained at a pump power of 41W. The pulse repetition frequency range of the stable Q-switching operation was adjusted without any loss of the average output power by changing the Gd:Y mixture ratio.

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