Open AccessPhotomixing at 1.55 µm in ion-irradiated In(0.53)Ga(0.47)As on InP
Author(s) -
N. Chimot,
J. Mangeney,
P. Crozat,
J.M. Lourtioz,
K. Blary,
JeanFrançois Lampin,
G. Mouret,
Damien Bigourd,
Éric Fertein
Publication year - 2006
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.14.001856
Subject(s) - terahertz radiation , materials science , photomixing , laser , optoelectronics , optics , irradiation , continuous wave , diode , ion , radiation , gallium arsenide , far infrared laser , chemistry , physics , terahertz metamaterials , nuclear physics , organic chemistry
We report the first demonstration of a terahertz photomixer made of ion-irradiated In(0.53)Ga(0.47)As lattice-matched to InP and fiber-optic coupled with the drive lasers. A continuous-wave radiation is generated at frequencies up to 0.8 THz by photomixing two continuous-wave laser diodes around 1.55 microm. The measured 3dB-down bandwidth of 300 GHz yields a carrier lifetime of 0.53 ps, in agreement with the value of 0.41 ps measured in pump probe experiments. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.