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High efficiency wavelength conversion of 10 Gb/s data in silicon waveguides
Author(s) -
Haisheng Rong,
Ying-Hao Kuo,
Ansheng Liu,
Mario Paniccia,
Oded Cohen
Publication year - 2006
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.14.001182
Subject(s) - optics , materials science , energy conversion efficiency , wavelength , waveguide , optoelectronics , diode , biasing , silicon , voltage , physics , quantum mechanics
Efficient wavelength conversion via four-wave-mixing in silicon-on-isolator p-i-n waveguides has been realized. By reverse biasing the p-i-n diode structure formed along the silicon rib waveguide, the nonlinear absorption due to two photon absorption induced free carrier absorption is significantly reduced, and a wavelength conversion efficiency of -8.5 dB has been achieved in an 8 cm long waveguide at a pump intensity of 40 MW/cm2. A high-speed pseudo-random bit sequence data at 10 Gb/s rate is converted to a new wavelength channel in the C-band with clear open eye diagram and no waveform distortion. Conversion efficiency as functions of pump power, wavelength detuning, and bias voltages, have been investigated. For shorter waveguides of 1.6 cm long, a conversion bandwidth of > 30 nm was achieved.

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