Open AccessIntensity-tunable group delay using stimulated Raman scattering in silicon slow-light waveguides
Author(s) -
Steve Blair,
K. Zheng
Publication year - 2006
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.14.001064
Subject(s) - optics , raman scattering , group delay and phase delay , resonator , slow light , intensity (physics) , waveguide , silicon , scattering , materials science , light intensity , raman spectroscopy , group velocity , nonlinear optics , physics , optoelectronics , laser , photonic crystal , telecommunications , bandwidth (computing) , computer science
We show that stimulated Raman scattering is a sufficiently strong effect in silicon waveguides to allow the intensity of a pump input to control the group delay of a weak Stokes-shifted signal. While the fractional change in group delay is minimal in a straight waveguide, microresonator enhancement can produce a fractional increase of 50% with respect to the linear group delay of the resonator.