Open AccessObservation of stimulated Raman amplification in silicon waveguides
Author(s) -
R. Claps,
D. Dimitropoulos,
Varun Raghunathan,
Young-Hee Han,
Bahram Jalali
Publication year - 2003
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.11.001731
Subject(s) - raman amplification , materials science , silicon on insulator , raman scattering , optics , silicon , waveguide , raman spectroscopy , laser , silicon photonics , optoelectronics , two photon absorption , absorption (acoustics) , physics
We report the first observation of Stimulated Raman Scattering (SRS) in silicon waveguides. Amplification of the Stokes signal, at 1542.3 nm, of up to 0.25 dB has been observed in Silicon-on-Insulator (SOI) waveguides, using a 1427 nm pump laser with a CW power of 1.6 W, measured before the waveguide. Two-Photon-Absorption (TPA) measurements on these waveguides are also reported, and found to be negligible at the pump power where SRS was observed.