Open AccessBuried selectively-oxidized AlGaAs structures grown on nonplanar substrates
Author(s) -
Pei-Cheng Ku,
J.A. Hernandez,
Connie J. Chang-Hasnain
Publication year - 2002
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.10.001003
Subject(s) - materials science , metalorganic vapour phase epitaxy , responsivity , optoelectronics , photodetector , grating , optics , substrate (aquarium) , oxide , aluminum oxide , aluminium , epitaxy , nanotechnology , layer (electronics) , oceanography , physics , geology , metallurgy
We demonstrate a novel buried oxide grating structure formed by selectively-oxidized AlxGa1-xAs grown on nonplanar substrates using lowpressure MOCVD for the first time. Localized aluminum content variation in AlGaAs is obtained with MOCVD growth on nonplanar substrate. Buried aluminum oxide/semiconductor distributed feedback structure is achieved with selective oxidation of these AlGaAs layers. We fabricated a resonant-cavity-enhanced photodetector with the imbedded buried-oxide structure and measured the photodetector responsivity spectrum.