Buried selectively-oxidized AlGaAs structures grown on nonplanar substrates | Zendy

C. C. Kuo | Zendy; J. Hernandez | Zendy; C.J. Chang-Hasnain | Zendy

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Buried selectively-oxidized AlGaAs structures grown on nonplanar substrates

Author(s) -

C. C. Kuo,

J. Hernandez,

C.J. Chang-Hasnain

Publication year - 2002

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.10.001003

Subject(s) - materials science , metalorganic vapour phase epitaxy , responsivity , optoelectronics , photodetector , grating , optics , substrate (aquarium) , oxide , aluminum oxide , aluminium , epitaxy , nanotechnology , layer (electronics) , oceanography , physics , geology , metallurgy

We demonstrate a novel buried oxide grating structure formed by selectively-oxidized AlxGa1-xAs grown on nonplanar substrates using lowpressure MOCVD for the first time. Localized aluminum content variation in AlGaAs is obtained with MOCVD growth on nonplanar substrate. Buried aluminum oxide/semiconductor distributed feedback structure is achieved with selective oxidation of these AlGaAs layers. We fabricated a resonant-cavity-enhanced photodetector with the imbedded buried-oxide structure and measured the photodetector responsivity spectrum.

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