Open AccessPowerful visible (530�??770 nm) luminescence in Yb,Ho:GGG with IR diode pumping
Author(s) -
Alexander V. Kir’yanov,
Vicente Aboites,
A. M. Belovolov,
M. I. Timoshechkin,
M I Belovolov,
M. J. Damzen,
A. Minassian
Publication year - 2002
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.10.000832
Subject(s) - luminescence , gadolinium gallium garnet , materials science , excited state , diode , optics , ion , crystal (programming language) , laser , laser diode , absorption (acoustics) , visible spectrum , analytical chemistry (journal) , infrared , optoelectronics , absorption spectroscopy , atomic physics , chemistry , physics , nanotechnology , epitaxy , organic chemistry , layer (electronics) , chromatography , computer science , composite material , programming language
Powerful visible luminescence in a Gadolinium Gallium Garnet (GGG) crystal, co-activated with Yb3+ (~15 at.%) and Ho3+ (~0.1 at.%) ions, is investigated under CW laser diode pumping (lambda = 938 and 976 nm). The main visible emission band is observed in the green with its peak at lambda ~540 nm) and measured to be about 10% with respect to Yb3+ IR luminescence (lambda ~1000 nm). Red (lambda ~650 nm) and near-IR (lambda ~755 nm) emission bands are also observed but are weaker (about 3-5%). Analysis of the crystal absorption and luminescence spectra allows one to conclude that Yb3+ - Ho3+ stepwise up-conversion is the mechanism explaining the phenomenon. Ho3+ ions embedded in the crystal in small concentration are shown to form an effective reservoir for energy transferred from the excited Yb3+ subsystem and to be an efficient source of the visible emission.