Open AccessOptimized sensitivity of Silicon-on-Insulator (SOI) strip waveguide resonator sensor
Author(s) -
Sahba TalebiFard,
Shon Schmidt,
Wei Shi,
Wenxuan Wu,
Nicolas A. F. Jaeger,
Ezra Kwok,
Daniel M. Ratner,
Lukas Chrostowski
Publication year - 2017
Publication title -
biomedical optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.362
H-Index - 86
ISSN - 2156-7085
DOI - 10.1364/boe.8.000500
Subject(s) - silicon on insulator , resonator , materials science , wafer , optoelectronics , waveguide , fabrication , silicon photonics , sensitivity (control systems) , silicon , photonics , cmos , optics , electronic engineering , physics , engineering , medicine , alternative medicine , pathology
Evanescent field sensors have shown promise for biological sensing applications. In particular, Silicon-on-Insulator (SOI)-nano-photonic based resonator sensors have many advantages for lab-on-chip diagnostics, including high sensitivity for molecular detection and compatibility with CMOS foundries for high volume manufacturing. We have investigated the optimum design parameters within the fabrication constraints of Multi-Project Wafer (MPW) foundries that result in the highest sensitivity for a resonator sensor. We have demonstrated the optimum waveguide thickness needed to achieve the maximum bulk sensitivity with SOI-based resonator sensors to be 165 nm using the quasi-TM guided mode. The closest thickness offered by MPW foundry services is 150 nm. Therefore, resonators with 150 nm thick silicon waveguides were fabricated resulting in sensitivities as high as 270 nm/RIU, whereas a similar resonator sensor with a 220 nm thick waveguide demonstrated sensitivities of approximately 200 nm/RIU.