Open AccessModifications of ion beam sputtered tantala thin films by secondary argon and oxygen bombardment
Author(s) -
L. Yang,
Emmett Randel,
G. Vajente,
A. Ananyeva,
E. K. Gustafson,
A.S. Markosyan,
R. Bassiri,
M. M. Fejer,
Carmen S. Mei
Publication year - 2020
Publication title -
applied optics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.668
H-Index - 197
eISSN - 2155-3165
pISSN - 1559-128X
DOI - 10.1364/ao.59.00a150
Subject(s) - thin film , materials science , amorphous solid , sputtering , argon , absorption (acoustics) , optics , oxygen , ion beam , refractive index , ion , optoelectronics , beam (structure) , atomic physics , chemistry , nanotechnology , composite material , physics , organic chemistry
Amorphous tantala ( T a 2 O 5 ) thin films were deposited by reactive ion beam sputtering with simultaneous low energy assis A r + or A r + / O 2+ bombardment. Under the conditions of the experiment, the as-deposited thin films are amorphous and stoichiometric. The refractive index and optical band gap of thin films remain unchanged by ion bombardment. Around 20% improvement in room temperature mechanical loss and 60% decrease in absorption loss are found in samples bombarded with 100-eV A r + . A detrimental influence from low energy O 2+ bombardment on absorption loss and mechanical loss is observed. Low energy A r + bombardment removes excess oxygen point defects, while O 2+ bombardment introduces defects into the tantala films.
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