Growth and characterization of Sc2O3 doped Ta2O5 thin films | Zendy

Mariana Fazio | Zendy; L. Yang | Zendy; A.S. Markosyan | Zendy; R. Bassiri | Zendy; M. M. Fejer | Zendy; Carmen S. Mei | Zendy

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Growth and characterization of Sc₂O₃ doped Ta₂O₅ thin films

Author(s) -

Mariana Fazio,

L. Yang,

A.S. Markosyan,

R. Bassiri,

M. M. Fejer,

Carmen S. Mei

Publication year - 2019

Publication title -

applied optics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.668

H-Index - 197

eISSN - 2155-3165

pISSN - 1559-128X

DOI - 10.1364/ao.59.00a106

Subject(s) - materials science , dopant , suboxide , refractive index , tantalum , doping , sputtering , thin film , scandium , absorption (acoustics) , analytical chemistry (journal) , band gap , characterization (materials science) , optics , optoelectronics , silicon , nanotechnology , metallurgy , chemistry , physics , chromatography , composite material

We present the optical and structural characterization of films of T a 2 O 5 , S c 2 O 3 , and S c 2 O 3 doped T a 2 O 5 with a cation ratio around 0.1 grown by reactive sputtering. The addition of S c 2 O 3 as a dopant induces the formation of tantalum suboxide due to the "oxygen getter" property of scandium. The presence of tantalum suboxide greatly affects the optical properties of the coating, resulting in higher absorption loss a λ =1064 n m . The refractive index and optical band gap of the mixed film do not correspond to those of a mixture of T a 2 O 5 and S c 2 O 3 , given the profound structural modifications induced by the dopant.

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