Open AccessImproving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
Author(s) -
Ravi Teja Velpula,
Barsha Jain,
Ha Quoc Thang Bui,
Fatemeh Mohammadi Shakiba,
Jeffrey Jude,
Moses Tumuna,
Hoang Duy Nguyen,
Trupti Ranjan Lenka,
Hieu Pham Trung Nguyen
Publication year - 2020
Publication title -
applied optics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.668
H-Index - 197
eISSN - 2155-3165
pISSN - 1559-128X
DOI - 10.1364/ao.394149
Subject(s) - light emitting diode , diode , materials science , algorithm , optoelectronics , computer science
This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270 n m . In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p - G a N region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p - t y p e EBL-based LED structure.