Open AccessAnalysis of AC-Conductivity in Chalcogenide Ge10Se20 Bi80Thin Film
Author(s) -
Shiveom Srivastav
Publication year - 2016
Publication title -
material science research india/material science research india
Language(s) - English
Resource type - Journals
eISSN - 2394-0565
pISSN - 0973-3469
DOI - 10.13005/msri/130208
Subject(s) - materials science , annealing (glass) , dielectric , analytical chemistry (journal) , torr , thin film , conductivity , atmospheric temperature range , thermal conduction , quenching (fluorescence) , chalcogenide , dielectric loss , composite material , chemistry , thermodynamics , optics , optoelectronics , nanotechnology , physics , chromatography , fluorescence
The alloy Ge10Se20 Bi80 has been prepared. Thin films of Ge10Se20 Bi80 has been prepared via a thermal evaporation method (melt quenching technique) with 3000A thickness, and rate of deposition (4.1) A/sec at pressure 2x10-5 Torr. The A.C electrical conductivity of a- thin films Ge10Se20 Bi80 has been studied as a function of frequency for annealing temperature within the range (423-623) K, the deduced exponent s values, was found to decrease with increasing of annealing temperature through the frequency of the range (102-106) Hz. It was found that, the correlated barrier hopping (CBH) is the dominant conduction mechanism. Values of dielectric constant ε1 and dielectric loss ε2 were found to decrease with frequency and increase with temperature. The activation energies have been calculated for the annealed thin films.