Open AccessModeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
Author(s) -
Waheb A. Jabbar,
Ahmed Mahmood,
Jamil Sultan
Publication year - 2022
Publication title -
telkomnika
Language(s) - English
Resource type - Journals
eISSN - 2302-9293
pISSN - 1693-6930
DOI - 10.12928/telkomnika.v20i1.21671
Subject(s) - scaling , materials science , field effect transistor , transistor , threshold voltage , semiconductor , channel (broadcasting) , short channel effect , optoelectronics , fin , nanoscopic scale , nano , drain induced barrier lowering , characterization (materials science) , mosfet , nanotechnology , voltage , electrical engineering , mathematics , engineering , composite material , geometry