Open AccessSimulation Study of Various Layers and Double δ-Doping Effect on Device Performance of InAlAs/InGaAs/InP HEMT
Author(s) -
Ahmad Neyaz Khan,
S. G. Anjum,
M. J. Siddiqui
Publication year - 2017
Publication title -
journal of new technology and materials
Language(s) - English
Resource type - Journals
ISSN - 2170-161X
DOI - 10.12816/0044039
Subject(s) - high electron mobility transistor , doping , optoelectronics , materials science , gallium arsenide , electrical engineering , transistor , engineering , voltage