Open AccessHIGH QUALITY GAN AND ALGAN LAYERS GROWN BY AMMONIA MBE WITH US GA AS SURFACTANT
Author(s) -
Зайцев,
Sergey M. Zaytsev,
Новиков,
С. А. Новиков,
Петров,
С. М. Петров,
Мамаев,
V. V. Mamaev,
Прохоренков,
Д. С. Прохоренков
Publication year - 2016
Publication title -
vestnik bgtu im. v.g. šuhova
Language(s) - English
Resource type - Journals
ISSN - 2071-7318
DOI - 10.12737/23648
Subject(s) - heterojunction , pulmonary surfactant , substrate (aquarium) , flux (metallurgy) , high electron mobility transistor , materials science , layer (electronics) , desorption , molecular beam epitaxy , optoelectronics , chemical engineering , nanotechnology , chemistry , epitaxy , adsorption , metallurgy , transistor , physics , quantum mechanics , engineering , oceanography , voltage , geology
In this work we present the results of AlN buffer layer ammonia MBE growth for HEMT using Ga as surfactant. Key parameters that affect the growth kinetics and defects formation are efficient fluxes of precursors and surfactant as well as the substrate temperature which limits surfactant flux because of desorption Ga from the surface. In particular, addition of Ga flux equal to Al flux at substrate temperature 1150 °C keeps the growth rate constant. This approach allows to increase surface mobility of adatoms, provides quick transition to 2D–growth mode, that results in mobility increasing in GaN bulk layer as well as in heterostructures with 2DEG. In GaN/AlGaN heterostructures mobility up to 2000 cm2/Vs was achieved.