Open AccessMODELING OF MOS TRANSISTOR WITH BUILT-IN CHANNEL PREPARED BY USING PHOSPHORUS DIFFUSION IN SILICON FROM PHOSPHORIC ANODIC OXIDE FILMS
Author(s) -
Alexander Vladimirovich Makharinets,
L. P. Mileshko
Publication year - 2015
Publication title -
v mire naučnyh otkrytij
Language(s) - English
Resource type - Journals
eISSN - 2307-9428
pISSN - 2072-0831
DOI - 10.12731/wsd-2014-12.1-15
Subject(s) - materials science , transconductance , silicon , diffusion , transistor , mosfet , threshold voltage , optoelectronics , anode , oxide , dielectric , capacitance , channel (broadcasting) , phosphoric acid , gate oxide , electrical engineering , electronic engineering , voltage , chemistry , engineering , metallurgy , thermodynamics , physics , electrode