Open AccessInfluence of High Electric Field on Operation of AlGaN/AlN/GaN High Electron Mobility Transistor
Author(s) -
Mateusz Glinkowski,
B. Paszkiewicz,
R. Paszkiewicz
Publication year - 2021
Publication title -
acta physica polonica. a
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.217
H-Index - 38
eISSN - 1898-794X
pISSN - 0587-4246
DOI - 10.12693/aphyspola.140.192
Subject(s) - materials science , electric field , induced high electron mobility transistor , optoelectronics , transistor , electron , electron mobility , high electron mobility transistor , electrical engineering , physics , voltage , quantum mechanics , engineering