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Analysis of the Influence of Annealing Temperature on Mechanisms of Charge Carrier Transfer in GaAs in the Aspect of Possible Applications in Photovoltaics
Author(s) -
P. Węgierek,
Justyna Pietraszek
Publication year - 2019
Publication title -
acta physica polonica a
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.217
H-Index - 38
eISSN - 1898-794X
pISSN - 0587-4246
DOI - 10.12693/aphyspola.136.299
Subject(s) - gallium arsenide , materials science , photovoltaic system , optoelectronics , photovoltaics , semiconductor , band gap , annealing (glass) , ion implantation , ion , solar cell , gallium , charge carrier , energy conversion efficiency , engineering physics , electrical engineering , chemistry , physics , composite material , engineering , organic chemistry , metallurgy

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