Open AccessHigh-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves
Author(s) -
P. Shiktorov,
E. Starikov,
V. Gruz̆inskis,
L. Varani,
L. Reggiani
Publication year - 2011
Publication title -
acta physica polonica a
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.217
H-Index - 38
eISSN - 1898-794X
pISSN - 0587-4246
DOI - 10.12693/aphyspola.119.117
Subject(s) - high electron mobility transistor , noise (video) , branching (polymer chemistry) , excitation , interference (communication) , plasma , electronic circuit , physics , optoelectronics , materials science , channel (broadcasting) , electrical engineering , computer science , engineering , transistor , voltage , quantum mechanics , artificial intelligence , composite material , image (mathematics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom