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Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II-Mn-VI Semiconductors - Mechanism of Lifetime Reduction
Author(s) -
S. Yatsunenko,
A. Khachapuridze,
V.Yu. Ivanov,
M. Godlewski,
Le Van Khoi,
Z. Gołacki,
G. Karczewski,
Ewa M. Goldys,
Matthew R. Phillips,
Peter J. Klar,
W. Heimbrodt
Publication year - 2003
Publication title -
acta physica polonica a
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.217
H-Index - 38
eISSN - 1898-794X
pISSN - 0587-4246
DOI - 10.12693/aphyspola.103.643
Subject(s) - manganese , semiconductor , materials science , mechanism (biology) , ion , condensed matter physics , spin (aerodynamics) , reduction (mathematics) , band gap , free carrier , nanostructure , magnetic semiconductor , chemical physics , optoelectronics , nanotechnology , chemistry , physics , thermodynamics , metallurgy , quantum mechanics , geometry , mathematics

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