Development of GaN-Based Resonant Cavity Light Emitting Diodes
Author(s) -
元诚 王
Publication year - 2017
Publication title -
optoelectronics
Language(s) - English
Resource type - Journals
eISSN - 2164-5450
pISSN - 2164-5469
DOI - 10.12677/oe.2017.74018
Subject(s) - optoelectronics , light emitting diode , resonant cavity , materials science , diode , gallium nitride , wide bandgap semiconductor , optics , physics , nanotechnology , laser , layer (electronics)
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