Open AccessResearch Progress of Irradiation Damage for GaAs Materials and Devices
Author(s) -
炳坤 陈
Publication year - 2018
Publication title -
applied physics
Language(s) - English
Resource type - Journals
eISSN - 2160-7567
pISSN - 2160-7575
DOI - 10.12677/app.2018.82017
Subject(s) - materials science , semiconductor , irradiation , optoelectronics , reliability (semiconductor) , semiconductor device , radiation damage , gallium arsenide , band gap , radiation , particle (ecology) , carrier lifetime , engineering physics , nanotechnology , optics , physics , silicon , power (physics) , oceanography , layer (electronics) , quantum mechanics , geology , nuclear physics
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